| PART |
Description |
Maker |
| AGB3301 AGB3301S24Q1 |
50 ohm HGIH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK 250 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
Gain Block Amplifiers
The AGB is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and low ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| B12V105 |
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
|
Bipolarics
|
| BRF504 |
NPN low noise silicon microwave transistor.
|
BOPOLARICS
ETC[ETC]
|
| BRF630 |
NPN Low Noise Silicon Microwave Transistor
|
Bipolarics
|
| TD-8030 TD-8031 TD-8059 TD-81 TD-8151 TD-8152 TD-8 |
MICROWAVE NOISE TUBES & NOISE SOURCES
MICROWAVE NOISE TUBES & NOISE SOURCES 微波噪声
|
CLARE[Clare, Inc.]
CLARE[Clare Inc.]
Clare Inc.
|
| 2SC3604 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
|
New Jersey Semi-Conductor Products, Inc.
|
| 2SC3582 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
|
NEC
|
| MGFC1801 |
FOR MICROWAVE LOW NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE
FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE
FOR MICROWAVE LOW-NOISE AMPLIFIERS /N-CHANNEL SCHOTTKY BARRIER GATE TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| INA-12063 INA-12063-TR1 INA-12063-BLK |
1500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
1.5 GHz的低噪声自偏置晶体管放大
1.5 GHz Low Noise Self-Biased Transistor Amplifier
|
http://
|
| ATR0610-PQQ ATR0610 |
2.7 V GPS LOW NOISE AMPLIFIER RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| CFK0301 CFK0301-AK-000T |
500 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
High Dynamic Range Dual, Low-Noise GaAs FET
|
List of Unclassifed Manufacturers
etc
|
| MGF1305 |
From old datasheet system
FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
